? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c, r gs = 1m 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c12a i dm t c = 25 c, pulse width limited by t jm 30 a i a t c = 25 c12a e as t c = 25 c 600 mj dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c 200 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. m d mounting force (to-263) 10..65 / 2.2..14.6 n/lb. weight to-263 2.5 g leaded to-263 2.8 g to-220 3.0 g ds99322f(04/08) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.5 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss 5 a v gs = 0v t j = 125 c 250 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 500 m polar tm power mosfet n-channel enhancement mode avalanche rated ixta12n50p ixti12n50p ixtp12n50p v dss = 500v i d25 = 12a r ds(on) 500m features z international standard packages z unclamped inductive switching (uis) rated z low package inductance easy to drive and to protect advantages z easy to mount z space savings z high power density g = gate d = drain s = source tab = drain to-220 (i xtp ) d (tab) g s to-263 (i xta ) g s (tab) g d s (tab) leaded to-263 (i xti )
ixys reserves the right to change limits, test conditions, and dimensions. ixta12n50p ixti12n50p ixtp12n50p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 7.5 13 s c iss 1830 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 182 pf c rss 16 pf t d(on) resistive switching times 22 ns t r v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 27 ns t d(off) r g = 10 (external) 65 ns t f 20 ns q g(on) 29 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 11 nc q gd 10 nc r thjc 0.62 c/w r thcs (to-220) 0.50 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0v 12 a i sm repetitive, pulse width limited by t jm 48 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm 2.8 c i rm 18.2 a note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 pins: 1 - gate 2 - drain to-220 (ixtp) outline leaded 263 (ixti) outline to-263 (ixta) outline i f = 6a, -di/dt = 150a/ s, v r = 100v, v gs = 0v
? 2008 ixys corporation, all rights reserved ixta12n50p ixti12n50p ixtp12 n50p fig. 2. extended output characteristics @ 25 o c 0 3 6 9 12 15 18 21 24 27 30 0 3 6 9 12151821242730 v d s - volts i d - amperes v gs = 10v 8v 7v 6v fig. 3. output characteristics @ 125 o c 0 2 4 6 8 10 12 024681012 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 1. output characteristics @ 25 o c 0 2 4 6 8 10 12 01234567 v d s - volts i d - amperes v gs = 10v 6v 7v fig. 4. r ds(on ) normalized to i d = 6a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 12a i d = 6a v gs = 10 v fig. 6. drain current vs. case te mpe rature 0 2 4 6 8 10 12 14 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) normalized to i d = 6a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 0 3 6 9 12 15 18 21 24 27 30 i d - amperes r d s ( o n ) - normalized t j = 125 o c t j = 25 o c v gs = 10 v
ixys reserves the right to change limits, test conditions, and dimensions. ixta12n50p ixti12n50p ixtp12n50p fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1m h z fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 3 6 9 12 15 18 21 24 27 30 q g - nanocoulombs v g s - volts v ds = 250v i d = 6a i g = 10ma fig. 7. input admittance 0 2 4 6 8 10 12 14 16 18 20 4.55.05.56.06.57.07.5 v g s - volts i d - amperes t j = 125 o c 25oc - 40oc fig. 8. transconductance 0 3 6 9 12 15 18 21 24 27 0 2 4 6 8 101214161820 i d - amperes g f s - siemens t j = - 40 o c 25 o c 125 o c fig. 9. source current vs. source-to-drain voltage 0 5 10 15 20 25 30 35 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 12. forward-bias safe operating area 1 10 100 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150oc t c = 25oc r ds(on) limi t 10ms 25s
? 2008 ixys corporation, all rights reserved fig. 13. maximum transient thermal impedance 0.01 0.10 1.00 0.01 0.1 1 10 100 1000 pulse width - milliseconds z ( t h ) j c - o c / w ixys ref: t_12n50p (4j) 04-14-08-d ixta12n50p ixti12n50p ixtp12 n50p
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